Scanning electron microscopy (SEM), in combination with focused ion beams (FIB), is an ideal technique for keeping up with the rapid evolution of the semiconductor industry by offering analytical capabilities with high levels of precision.
The semiconductor industry is engaged in a relentless race where the aim is high integration, high density and miniaturisation of logic devices. This has resulted in the development of new technologies such as 3D ICs that make it possible to integrate extensive functionality into ever smaller, faster and lower power consumption devices. However, these more complicated integrated circuits require more sophisticated tools for development and prototyping, inspection and failure analysis in order to analyse or reach the areas of interest.
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